The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C: Fid-Bau Portal

The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C

Lin, Y. / Yasuda, H. / Schiekofer, M. / Xia, G.

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The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C

Lin, Y. / Yasuda, H. / Schiekofer, M. / Xia, G.

The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C

Lin, Y. / Yasuda, H. / Schiekofer, M. / Xia, G.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C

Contributors:

Lin, Y. (author) / Yasuda, H. (author) / Schiekofer, M. (author) / Xia, G. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 51 ; 1532-1540

Publication date:

2016-01-01

Size:

9 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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