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Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
Usuda, K. (author) / Mizuno, T. (author) / Tezuka, T. (author) / Sugiyama, N. (author) / Moriyama, Y. (author) / Nakaharai, S. (author) / Takagi, S. i. (author)
APPLIED SURFACE SCIENCE ; 224 ; 113-116
2004-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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