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Kinetics of epitaxial growth of Si and SiGe films on (110) Si substrates

Sugiyama, N. / Moriyama, Y. / Nakaharai, S. / Tezuka, T. / Mizuno, T. / Takagi, S.

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Kinetics of epitaxial growth of Si and SiGe films on (110) Si substrates

Sugiyama, N. / Moriyama, Y. / Nakaharai, S. / Tezuka, T. / Mizuno, T. / Takagi, S.

Kinetics of epitaxial growth of Si and SiGe films on (110) Si substrates

Sugiyama, N. / Moriyama, Y. / Nakaharai, S. / Tezuka, T. / Mizuno, T. / Takagi, S.

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Document information

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Document information

Title:

Kinetics of epitaxial growth of Si and SiGe films on (110) Si substrates

Contributors:

Sugiyama, N. (author) / Moriyama, Y. (author) / Nakaharai, S. (author) / Tezuka, T. (author) / Mizuno, T. (author) / Takagi, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 188-192

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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