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SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mm MOSFET fabrication
SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mm MOSFET fabrication
SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mm MOSFET fabrication
Shim, J. (author) / Oh, H. (author) / Choi, H. (author) / Sakaguchi, T. (author) / Kurino, H. (author) / Koyanagi, M. (author)
APPLIED SURFACE SCIENCE ; 224 ; 260-264
2004-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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