Low-frequency noise suppression and dc characteristics enhancement in sub-mm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE: Fid-Bau Portal

Low-frequency noise suppression and dc characteristics enhancement in sub-mm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Myronov, M. / Durov, S. / Mironov, O. A. / Parker, E. H. / Whall, T. E. / Hackbarth, T. / Hock, G. / Herzog, H. J. / Konig, U.

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Low-frequency noise suppression and dc characteristics enhancement in sub-mm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Myronov, M. / Durov, S. / Mironov, O. A. / Parker, E. H. / Whall, T. E. / Hackbarth, T. / Hock, G. / Herzog, H. J. / Konig, U.

Low-frequency noise suppression and dc characteristics enhancement in sub-mm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Myronov, M. / Durov, S. / Mironov, O. A. / Parker, E. H. / Whall, T. E. / Hackbarth, T. / Hock, G. / Herzog, H. J. / Konig, U.

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Title:

Low-frequency noise suppression and dc characteristics enhancement in sub-mm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Contributors:

Myronov, M. (author) / Durov, S. (author) / Mironov, O. A. (author) / Parker, E. H. (author) / Whall, T. E. (author) / Hackbarth, T. (author) / Hock, G. (author) / Herzog, H. J. (author) / Konig, U. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 265-269

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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