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    Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

    New search for: Ohshima, T.
    New search for: Lee, K. K.
    New search for: Ohi, A.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.

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    Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

    New search for: Ohshima, T.
    New search for: Lee, K. K.
    New search for: Ohi, A.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

    New search for: Ohshima, T.
    New search for: Lee, K. K.
    New search for: Ohi, A.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

    Contributors:

    Ohshima, T. (author) / Lee, K. K. (author) / Ohi, A. (author) / Yoshikawa, M. (author) / Itoh, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1093-1096

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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