A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters
Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters
Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters
Kim, J. Y. (author) / Lee, B. W. (author) / Nam, H. S. (author) / Kwon, D. (author) / Kang, S.-G. / Kobayashi, T.
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Silicon carbide film forming device and preparation process of silicon carbide film
| European Patent Office | 2024
Intrinsic Defects in Silicon Carbide Polytypes
| British Library Online Contents | 2001
| British Library Online Contents | 2004
Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas
| British Library Online Contents | 2013
| European Patent Office | 2020