MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge: Fid-Bau Portal

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Aguas, H. / Pereira, L. / Raniero, L. / Fortunato, E. / Martins, R.

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MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Aguas, H. / Pereira, L. / Raniero, L. / Fortunato, E. / Martins, R.

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Aguas, H. / Pereira, L. / Raniero, L. / Fortunato, E. / Martins, R.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Contributors:

Aguas, H. (author) / Pereira, L. (author) / Raniero, L. (author) / Fortunato, E. (author) / Martins, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 455/456 ; 73-76

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Martins, R. / Aguas, H. / Ferreira, I. et al. | British Library Online Contents | 2004

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