Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap: Fid-Bau Portal

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Negoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H.

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Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Negoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H.

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Negoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H.

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Check availability in my library

Order at Subito €

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Document information

Title:

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

Contributors:

Negoro, Y. (author) / Katsumoto, K. (author) / Kimoto, T. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 933-936

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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