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    Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

    New search for: Kosugi, R.
    New search for: Kiritani, N.
    New search for: Suzuki, K.
    New search for: Yatsuo, T.
    New search for: Adachi, K.
    New search for: Fukuda, K.

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    Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

    New search for: Kosugi, R.
    New search for: Kiritani, N.
    New search for: Suzuki, K.
    New search for: Yatsuo, T.
    New search for: Adachi, K.
    New search for: Fukuda, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

    New search for: Kosugi, R.
    New search for: Kiritani, N.
    New search for: Suzuki, K.
    New search for: Yatsuo, T.
    New search for: Adachi, K.
    New search for: Fukuda, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

    Contributors:

    Kosugi, R. (author) / Kiritani, N. (author) / Suzuki, K. (author) / Yatsuo, T. (author) / Adachi, K. (author) / Fukuda, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 1397-1400

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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