Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation: Fid-Bau Portal

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Strel chuk, A. M. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Kuznetsov, A. N. / Valakh, M. Y. / Kiselev, V. S. / Romanyuk, B. N. / Raynaud, C. / Chante, J. P.

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Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Strel chuk, A. M. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Kuznetsov, A. N. / Valakh, M. Y. / Kiselev, V. S. / Romanyuk, B. N. / Raynaud, C. / Chante, J. P.

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Strel chuk, A. M. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Kuznetsov, A. N. / Valakh, M. Y. / Kiselev, V. S. / Romanyuk, B. N. / Raynaud, C. / Chante, J. P.

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Title:

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Contributors:

Strel chuk, A. M. (author) / Lebedev, A. A. (author) / Davydov, D. V. (author) / Savkina, N. S. (author) / Kuznetsov, A. N. (author) / Valakh, M. Y. (author) / Kiselev, V. S. (author) / Romanyuk, B. N. (author) / Raynaud, C. (author) / Chante, J. P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1133-1136

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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