A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layer: Fid-Bau Portal

A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layer

Zhao, J. H. / Zhang, J. / Alexandrov, P. / Li, X. / Burke, T.

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A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layer

Zhao, J. H. / Zhang, J. / Alexandrov, P. / Li, X. / Burke, T.

A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layer

Zhao, J. H. / Zhang, J. / Alexandrov, P. / Li, X. / Burke, T.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layer

Contributors:

Zhao, J. H. (author) / Zhang, J. (author) / Alexandrov, P. (author) / Li, X. (author) / Burke, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1173-1176

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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