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Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures
Zhang, N. (author) / Rao, Y. (author) / Xu, N. (author) / Maralani, A. (author) / Pisano, A.P. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.
Silicon Carbide and Related Materials 2013 ; 1013-1016
MATERIALS SCIENCE FORUM ; 778/780
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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