A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT: Fid-Bau Portal

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Nonaka, K. / Horiuchi, A. / Negoro, Y. / Iwanaga, K. / Yokoyama, S. / Hashimoto, H. / Sato, M. / Maeyama, Y. / Shimizu, M. / Iwakuro, H.

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A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Nonaka, K. / Horiuchi, A. / Negoro, Y. / Iwanaga, K. / Yokoyama, S. / Hashimoto, H. / Sato, M. / Maeyama, Y. / Shimizu, M. / Iwakuro, H.

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Nonaka, K. / Horiuchi, A. / Negoro, Y. / Iwanaga, K. / Yokoyama, S. / Hashimoto, H. / Sato, M. / Maeyama, Y. / Shimizu, M. / Iwakuro, H.

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Title:

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Contributors:

Nonaka, K. (author) / Horiuchi, A. (author) / Negoro, Y. (author) / Iwanaga, K. (author) / Yokoyama, S. (author) / Hashimoto, H. (author) / Sato, M. (author) / Maeyama, Y. (author) / Shimizu, M. (author) / Iwakuro, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 821-824

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Negoro, Y. / Horiuchi, A. / Iwanaga, K. et al. | British Library Online Contents | 2009

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