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    Hall Effect Measurements in SiC Buried-Channel MOS Devices

    New search for: Saks, N. S.
    New search for: Ryu, S. H.

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    Hall Effect Measurements in SiC Buried-Channel MOS Devices

    New search for: Saks, N. S.
    New search for: Ryu, S. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Hall Effect Measurements in SiC Buried-Channel MOS Devices

    New search for: Saks, N. S.
    New search for: Ryu, S. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Hall Effect Measurements in SiC Buried-Channel MOS Devices

    Contributors:

    Saks, N. S. (author) / Ryu, S. H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 1287-1292

    Publication date:

    2004-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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