Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates: Fid-Bau Portal

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Skromme, B. J. / Mikhov, M. K. / Chen, L. / Samson, G. / Wang, R. / Li, C. / Bhat, I.

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Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Skromme, B. J. / Mikhov, M. K. / Chen, L. / Samson, G. / Wang, R. / Li, C. / Bhat, I.

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Skromme, B. J. / Mikhov, M. K. / Chen, L. / Samson, G. / Wang, R. / Li, C. / Bhat, I.

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Title:

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Contributors:

Skromme, B. J. (author) / Mikhov, M. K. (author) / Chen, L. (author) / Samson, G. (author) / Wang, R. (author) / Li, C. (author) / Bhat, I. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 581-584

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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