Sub-100nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50kV e-beam lithography: Fid-Bau Portal

Sub-100nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50kV e-beam lithography

Kim, S. C. / Lim, B. O. / Lee, H. S. / Shin, D. H. / Kim, S. K. / Park, H. C. / Rhee, J. K.

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Sub-100nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50kV e-beam lithography

Kim, S. C. / Lim, B. O. / Lee, H. S. / Shin, D. H. / Kim, S. K. / Park, H. C. / Rhee, J. K.

Sub-100nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50kV e-beam lithography

Kim, S. C. / Lim, B. O. / Lee, H. S. / Shin, D. H. / Kim, S. K. / Park, H. C. / Rhee, J. K.

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Order at Subito €

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Title:

Sub-100nm T-gate fabrication using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure at 50kV e-beam lithography

Contributors:

Kim, S. C. (author) / Lim, B. O. (author) / Lee, H. S. (author) / Shin, D. H. (author) / Kim, S. K. (author) / Park, H. C. (author) / Rhee, J. K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 7-11

Publication date:

2004-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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