Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer: Fid-Bau Portal

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Nohira, H. / Shiraishi, T. / Takahashi, K. / Hattori, T. / Kashiwagi, I. / Ohshima, C. / Ohmi, S. / Iwai, H. / Joumori, S. / Nakajima, K.

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Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Nohira, H. / Shiraishi, T. / Takahashi, K. / Hattori, T. / Kashiwagi, I. / Ohshima, C. / Ohmi, S. / Iwai, H. / Joumori, S. / Nakajima, K.

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Nohira, H. / Shiraishi, T. / Takahashi, K. / Hattori, T. / Kashiwagi, I. / Ohshima, C. / Ohmi, S. / Iwai, H. / Joumori, S. / Nakajima, K.

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Title:

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Contributors:

Nohira, H. (author) / Shiraishi, T. (author) / Takahashi, K. (author) / Hattori, T. (author) / Kashiwagi, I. (author) / Ohshima, C. (author) / Ohmi, S. (author) / Iwai, H. (author) / Joumori, S. (author) / Nakajima, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 234 ; 493-496

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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