Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation: Fid-Bau Portal

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Li, X. F. / Liu, X. J. / Cao, Y. Q. / Li, A. D. / Li, H. / Wu, D.

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Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Li, X. F. / Liu, X. J. / Cao, Y. Q. / Li, A. D. / Li, H. / Wu, D.

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Li, X. F. / Liu, X. J. / Cao, Y. Q. / Li, A. D. / Li, H. / Wu, D.

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Check availability in my library

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Document information

Title:

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Contributors:

Li, X. F. (author) / Liu, X. J. (author) / Cao, Y. Q. (author) / Li, A. D. (author) / Li, H. (author) / Wu, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 264 ; 783-786

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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