Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method

    New search for: Kochowski, S.
    New search for: Nitsch, K.
    New search for: Paszkiewicz, B.
    New search for: Paszkiewicz, R.
    New search for: Szydlowski, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method

    New search for: Kochowski, S.
    New search for: Nitsch, K.
    New search for: Paszkiewicz, B.
    New search for: Paszkiewicz, R.
    New search for: Szydlowski, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method

    New search for: Kochowski, S.
    New search for: Nitsch, K.
    New search for: Paszkiewicz, B.
    New search for: Paszkiewicz, R.
    New search for: Szydlowski, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method

    Contributors:

    Kochowski, S. (author) / Nitsch, K. (author) / Paszkiewicz, B. (author) / Paszkiewicz, R. (author) / Szydlowski, M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 235 ; 389-394

    Publication date:

    2004-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures

    Kochowski, S. / Szydlowski, M. / Thurzo, I. et al. | British Library Online Contents | 2006

    Admittance spectroscopy of GaAs/InGaP MQW structures

    Gombia, E. / Ghezzi, C. / Parisini, A. et al. | British Library Online Contents | 2008

    Analysis of electrical equivalent circuit of metal-insulator-semiconductor structure based on admittance measurements

    Kochowski, S. / Szydlowski, M. / Paszkiewicz, R. et al. | British Library Online Contents | 2008

    Optimization of Si interface control layer thickness for high-k GaAs metal-insulator-semiconductor structures

    Akazawa, M. / Hasegawa, H. | British Library Online Contents | 2009

    Negative-bias-temperature-instability in metal-insulator-semiconductor structures

    Volkos, S. N. / Peaker, A. R. / Hawkins, I. D. et al. | British Library Online Contents | 2004

    Back to top