X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface: Fid-Bau Portal

X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Vitchev, R. G. / Pireaux, J. J. / Conard, T. / Bender, H. / Wolstenholme, J. / Defranoux, C.

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X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Vitchev, R. G. / Pireaux, J. J. / Conard, T. / Bender, H. / Wolstenholme, J. / Defranoux, C.

X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Vitchev, R. G. / Pireaux, J. J. / Conard, T. / Bender, H. / Wolstenholme, J. / Defranoux, C.

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Order at Subito €

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Document information

Title:

X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

Contributors:

Vitchev, R. G. (author) / Pireaux, J. J. (author) / Conard, T. (author) / Bender, H. (author) / Wolstenholme, J. (author) / Defranoux, C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 235 ; 21-25

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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