Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices: Fid-Bau Portal

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Mroczynski, R. / Taube, A. / Gieraltowska, S. / Guziewicz, E. / Godlewski, M.

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Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Mroczynski, R. / Taube, A. / Gieraltowska, S. / Guziewicz, E. / Godlewski, M.

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Mroczynski, R. / Taube, A. / Gieraltowska, S. / Guziewicz, E. / Godlewski, M.

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Title:

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Contributors:

Mroczynski, R. (author) / Taube, A. (author) / Gieraltowska, S. (author) / Guziewicz, E. (author) / Godlewski, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 8366-8370

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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