Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer: Fid-Bau Portal

Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer

Choo, D. C. / Kim, T. W.

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Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer

Choo, D. C. / Kim, T. W.

Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer

Choo, D. C. / Kim, T. W.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

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Dokumentinformationen

Titel:

Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer

Beteiligte:

Choo, D. C. (Autor:in) / Kim, T. W. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 113 ; 56-59

Erscheinungsdatum:

01.01.2004

Format / Umfang:

4 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Jung, M. / Kim, T. W. / Lee, D. U. et al. | British Library Online Contents | 2002

Strain effect and carrier density in modulation-doped AlxGa1 - xAs/InyGa1 - yAs/GaAs step quantum wells with an embedded potential barrier

Kim, T. W. / Kim, D. Y. | British Library Online Contents | 2003

Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1-xAs/InyGa1-yAs/AlxGa1-xAs step quantum wells

Jung, M. / Kim, T. W. | British Library Online Contents | 2004

Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

Lee, D. U. / Kim, T. W. / Yoo, K. H. | British Library Online Contents | 2005

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells

Jung, M. / Kim, T. W. / Lee, D. U. et al. | British Library Online Contents | 2001

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