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Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Pisecny, P. / Husekova, K. / Frohlich, K. / Harmatha, L. / Soltys, J. / Machajdik, D. / Espinos, J. P. / Jergel, M. / Jakabovic, J.

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Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Pisecny, P. / Husekova, K. / Frohlich, K. / Harmatha, L. / Soltys, J. / Machajdik, D. / Espinos, J. P. / Jergel, M. / Jakabovic, J.

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Pisecny, P. / Husekova, K. / Frohlich, K. / Harmatha, L. / Soltys, J. / Machajdik, D. / Espinos, J. P. / Jergel, M. / Jakabovic, J.

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Document information

Title:

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Contributors:

Pisecny, P. (author) / Husekova, K. (author) / Frohlich, K. (author) / Harmatha, L. (author) / Soltys, J. (author) / Machajdik, D. (author) / Espinos, J. P. (author) / Jergel, M. (author) / Jakabovic, J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 231-236

Publication date:

2004-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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