Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors: Fid-Bau Portal

Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors

Lysaght, P. S. / Peterson, J. J. / Foran, B. / Young, C. D. / Bersuker, G. / Huff, H. R.

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Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors

Lysaght, P. S. / Peterson, J. J. / Foran, B. / Young, C. D. / Bersuker, G. / Huff, H. R.

Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors

Lysaght, P. S. / Peterson, J. J. / Foran, B. / Young, C. D. / Bersuker, G. / Huff, H. R.

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Check availability in my library

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Document information

Title:

Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors

Contributors:

Lysaght, P. S. (author) / Peterson, J. J. (author) / Foran, B. (author) / Young, C. D. (author) / Bersuker, G. (author) / Huff, H. R. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 259-263

Publication date:

2004-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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