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Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Huang, L. T. / Chang, M. L. / Huang, J. J. / Lin, H. C. / Kuo, C. L. / Lee, M. H. / Liu, C. W. / Chen, M. J.

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Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Huang, L. T. / Chang, M. L. / Huang, J. J. / Lin, H. C. / Kuo, C. L. / Lee, M. H. / Liu, C. W. / Chen, M. J.

Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Huang, L. T. / Chang, M. L. / Huang, J. J. / Lin, H. C. / Kuo, C. L. / Lee, M. H. / Liu, C. W. / Chen, M. J.

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Document information

Title:

Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Contributors:

Huang, L. T. (author) / Chang, M. L. (author) / Huang, J. J. (author) / Lin, H. C. (author) / Kuo, C. L. (author) / Lee, M. H. (author) / Liu, C. W. (author) / Chen, M. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 266 ; 89-93

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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