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Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces

Windl, W. / Liang, T. / Lopatin, S. / Duscher, G.

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Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces

Windl, W. / Liang, T. / Lopatin, S. / Duscher, G.

Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces

Windl, W. / Liang, T. / Lopatin, S. / Duscher, G.

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Access via TIB

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Order at Subito €

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Document information

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Document information

Title:

Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces

Contributors:

Windl, W. (author) / Liang, T. (author) / Lopatin, S. (author) / Duscher, G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 156-161

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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