Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon: Fid-Bau Portal

Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

Camillo-Castillo, R. A. / Law, M. E. / Jones, K. S.

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Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

Camillo-Castillo, R. A. / Law, M. E. / Jones, K. S.

Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

Camillo-Castillo, R. A. / Law, M. E. / Jones, K. S.

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Check availability in my library

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Document information

Title:

Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

Contributors:

Camillo-Castillo, R. A. (author) / Law, M. E. (author) / Jones, K. S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 312-317

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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