Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing: Fid-Bau Portal

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Faure, J. / Claverie, A. / Laanab, L. / Bonhomme, P.

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Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Faure, J. / Claverie, A. / Laanab, L. / Bonhomme, P.

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Faure, J. / Claverie, A. / Laanab, L. / Bonhomme, P.

Access

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Check availability in my library

Order at Subito €

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Document information

Title:

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Contributors:

Faure, J. (author) / Claverie, A. (author) / Laanab, L. (author) / Bonhomme, P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 22 ; 128

Publication date:

1994-01-01

Size:

128 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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