TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions: Fid-Bau Portal

TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Sibaja-Hernandez, A. / Wei Xu, M. / Decoutere, S. / Maes, H.

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TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Sibaja-Hernandez, A. / Wei Xu, M. / Decoutere, S. / Maes, H.

TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Sibaja-Hernandez, A. / Wei Xu, M. / Decoutere, S. / Maes, H.

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Check availability in my library

Order at Subito €

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Document information

Title:

TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Contributors:

Sibaja-Hernandez, A. (author) / Wei Xu, M. (author) / Decoutere, S. (author) / Maes, H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 115-120

Publication date:

2005-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

Barthula, M. / Aubry-Fortuna, V. / Meyer, F. et al. | British Library Online Contents | 1998

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

Karunaratne, M. S. / Bonar, J. M. / Ashburn, P. et al. | British Library Online Contents | 2006

NiSi integration in a non-selective base SiGeC HBT process

Haralson, E. / Suvar, E. / Gunnar Malm, B. et al. | British Library Online Contents | 2005

Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing

Faure, J. / Claverie, A. / Laanab, L. et al. | British Library Online Contents | 1994

SiGeC HBTs : The TCAD Challenge Reduced to Practice

Decoutere, S. / Sibaja-Hernandez, A. | British Library Online Contents | 2005