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    Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method

    New search for: Usuda, K.
    New search for: Numata, T.
    New search for: Takagi, S.

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    Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method

    New search for: Usuda, K.
    New search for: Numata, T.
    New search for: Takagi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method

    New search for: Usuda, K.
    New search for: Numata, T.
    New search for: Takagi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method

    Contributors:

    Usuda, K. (author) / Numata, T. (author) / Takagi, S. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 155-159

    Publication date:

    2005-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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