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Optimal Ge profile design for base transit time of Si/SiGe HBTs

Chang, S. T. / Liu, Y. H. / Lee, M. H. / Lu, S. C. / Tsai, M. J.

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Optimal Ge profile design for base transit time of Si/SiGe HBTs

Chang, S. T. / Liu, Y. H. / Lee, M. H. / Lu, S. C. / Tsai, M. J.

Optimal Ge profile design for base transit time of Si/SiGe HBTs

Chang, S. T. / Liu, Y. H. / Lee, M. H. / Lu, S. C. / Tsai, M. J.

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Check availability in my library

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Document information

Title:

Optimal Ge profile design for base transit time of Si/SiGe HBTs

Contributors:

Chang, S. T. (author) / Liu, Y. H. (author) / Lee, M. H. (author) / Lu, S. C. (author) / Tsai, M. J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 289-294

Publication date:

2005-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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