Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques: Fid-Bau Portal

Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

Eneman, G. / Verheyen, P. / Rooyackers, R. / Delhougne, R. / Loo, R. / Caymax, M. / Meunier-Beillard, P. / De Meyer, K. / Vandervorst, W.

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Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

Eneman, G. / Verheyen, P. / Rooyackers, R. / Delhougne, R. / Loo, R. / Caymax, M. / Meunier-Beillard, P. / De Meyer, K. / Vandervorst, W.

Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

Eneman, G. / Verheyen, P. / Rooyackers, R. / Delhougne, R. / Loo, R. / Caymax, M. / Meunier-Beillard, P. / De Meyer, K. / Vandervorst, W.

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Title:

Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

Contributors:

Eneman, G. (author) / Verheyen, P. (author) / Rooyackers, R. (author) / Delhougne, R. (author) / Loo, R. (author) / Caymax, M. (author) / Meunier-Beillard, P. (author) / De Meyer, K. (author) / Vandervorst, W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 337-342

Publication date:

2005-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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