Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process: Fid-Bau Portal

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Paul, D. J. / Temple, M. / Olsen, S. H. / ONeill, A. G. / Tang, Y. T. / Waite, A. M. / Cerrina, C. / Evans, A. G. / Li, X. / Zhang, J.

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Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Paul, D. J. / Temple, M. / Olsen, S. H. / ONeill, A. G. / Tang, Y. T. / Waite, A. M. / Cerrina, C. / Evans, A. G. / Li, X. / Zhang, J.

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Paul, D. J. / Temple, M. / Olsen, S. H. / ONeill, A. G. / Tang, Y. T. / Waite, A. M. / Cerrina, C. / Evans, A. G. / Li, X. / Zhang, J.

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Title:

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Contributors:

Paul, D. J. (author) / Temple, M. (author) / Olsen, S. H. (author) / ONeill, A. G. (author) / Tang, Y. T. (author) / Waite, A. M. (author) / Cerrina, C. (author) / Evans, A. G. (author) / Li, X. (author) / Zhang, J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 343-346

Publication date:

2005-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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