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    The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

    New search for: Tao, Z.
    New search for: Zhan, N.
    New search for: Yang, H.
    New search for: Ling, Y.
    New search for: Zhong, Z.
    New search for: Lu, F.

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    The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

    New search for: Tao, Z.
    New search for: Zhan, N.
    New search for: Yang, H.
    New search for: Ling, Y.
    New search for: Zhong, Z.
    New search for: Lu, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

    New search for: Tao, Z.
    New search for: Zhan, N.
    New search for: Yang, H.
    New search for: Ling, Y.
    New search for: Zhong, Z.
    New search for: Lu, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

    Contributors:

    Tao, Z. (author) / Zhan, N. (author) / Yang, H. (author) / Ling, Y. (author) / Zhong, Z. (author) / Lu, F. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 255 ; 3548-3551

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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