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    A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

    New search for: Hyvert, G.
    New search for: Nguyen, T.
    New search for: Militaru, L.
    New search for: Poncet, A.
    New search for: Plossu, C.

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    A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

    New search for: Hyvert, G.
    New search for: Nguyen, T.
    New search for: Militaru, L.
    New search for: Poncet, A.
    New search for: Plossu, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

    New search for: Hyvert, G.
    New search for: Nguyen, T.
    New search for: Militaru, L.
    New search for: Poncet, A.
    New search for: Plossu, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

    Contributors:

    Hyvert, G. (author) / Nguyen, T. (author) / Militaru, L. (author) / Poncet, A. (author) / Plossu, C. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 165 ; 129-131

    Publication date:

    2009-01-01

    Size:

    3 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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