Electrical properties of Si1-yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs: Fid-Bau Portal

Electrical properties of Si1-yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs

Ducroquet, F. / Ernst, T. / Weber, O. / Hartmann, J. M. / Loup, V. / Besson, P. / Brevard, L. / Di Maria, J. L. / Deleonibus, S.

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Electrical properties of Si1-yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs

Ducroquet, F. / Ernst, T. / Weber, O. / Hartmann, J. M. / Loup, V. / Besson, P. / Brevard, L. / Di Maria, J. L. / Deleonibus, S.

Electrical properties of Si1-yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs

Ducroquet, F. / Ernst, T. / Weber, O. / Hartmann, J. M. / Loup, V. / Besson, P. / Brevard, L. / Di Maria, J. L. / Deleonibus, S.

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Title:

Electrical properties of Si1-yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs

Contributors:

Ducroquet, F. (author) / Ernst, T. (author) / Weber, O. (author) / Hartmann, J. M. (author) / Loup, V. (author) / Besson, P. (author) / Brevard, L. (author) / Di Maria, J. L. (author) / Deleonibus, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 274-277

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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