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High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
Myers, R. L. (author) / Shishkin, Y. (author) / Kordina, O. (author) / Haselbarth, I. (author) / Saddow, S. E. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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