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    Hall Effect in the Channel of 3C-SiC MOSFETs

    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Bakowski, M.
    New search for: Schoner, A.
    New search for: Nagasawa, H.
    New search for: Abe, M.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

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    Hall Effect in the Channel of 3C-SiC MOSFETs

    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Bakowski, M.
    New search for: Schoner, A.
    New search for: Nagasawa, H.
    New search for: Abe, M.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Hall Effect in the Channel of 3C-SiC MOSFETs

    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Bakowski, M.
    New search for: Schoner, A.
    New search for: Nagasawa, H.
    New search for: Abe, M.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Hall Effect in the Channel of 3C-SiC MOSFETs

    Contributors:

    Krieger, M. (author) / Pensl, G. (author) / Bakowski, M. (author) / Schoner, A. (author) / Nagasawa, H. (author) / Abe, M. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

    Published in:

    Silicon Carbide and Related Materials 2004 ; 441-444

    MATERIALS SCIENCE FORUM ; 483/485

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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