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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
Uhnevionak, V. (author) / Burenkov, A. (author) / Strenger, C. (author) / Mortet, V. (author) / Bedel-Pereira, E. (author) / Cristiano, F. (author) / Bauer, A.J. (author) / Pichler, P. (author) / Okumura, H. / Harima, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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