Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, M. S. / Lenahan, P. M. / Lelis, A. J. | British Library Online Contents | 2006

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Bohna, N. A. / Lenahan, P. M. et al. | British Library Online Contents | 2004

Silicon Carbide Power Field-Effect Transistors

Zhao, J. H. | British Library Online Contents | 2005

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, M. / Bayne, S. / Veliadis, V. et al. | British Library Online Contents | 2012

Light-Emitting Field-Effect Transistors Having Combined Organic Semiconductor and Metal Oxide Layers

Yamada, K. / Yamao, T. / Hotta, S. | British Library Online Contents | 2013