Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling: Fid-Bau Portal

Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling

Zolnai, Z. / Ster, A. / Khanh, N. Q. / Kotai, E. / Posselt, M. / Battistig, G. / Lohner, T. / Gyulai, J.

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Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling

Zolnai, Z. / Ster, A. / Khanh, N. Q. / Kotai, E. / Posselt, M. / Battistig, G. / Lohner, T. / Gyulai, J.

Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling

Zolnai, Z. / Ster, A. / Khanh, N. Q. / Kotai, E. / Posselt, M. / Battistig, G. / Lohner, T. / Gyulai, J.

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Title:

Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling

Contributors:

Zolnai, Z. (author) / Ster, A. (author) / Khanh, N. Q. (author) / Kotai, E. (author) / Posselt, M. (author) / Battistig, G. (author) / Lohner, T. (author) / Gyulai, J. (author) / Nipoti, R. / Poggi, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 637-640

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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