A platform for research: civil engineering, architecture and urbanism
Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation
Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation
Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation
Ali, S. (author) / Gharghi, M. (author) / Sivoththaman, S. (author) / Zeaiter, K. (author)
JOURNAL OF MATERIALS SCIENCE ; 40 ; 1469-1473
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD
British Library Online Contents | 2013
|Neural network modeling of PECVD silicon nitride films
British Library Online Contents | 1999
|British Library Online Contents | 2006
|PECVD synthesis, optical and mechanical properties of silicon carbon nitride films
British Library Online Contents | 2015
Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD
British Library Online Contents | 2013
|