Structural properties of Ge-implanted SiO2 layers and related MOS memory effects: Fid-Bau Portal

Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

Duguay, S. / Slaoui, A. / Grob, J. J. / Kanoun, M. / Burignat, S. / Souifi, A.

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Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

Duguay, S. / Slaoui, A. / Grob, J. J. / Kanoun, M. / Burignat, S. / Souifi, A.

Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

Duguay, S. / Slaoui, A. / Grob, J. J. / Kanoun, M. / Burignat, S. / Souifi, A.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

Contributors:

Duguay, S. (author) / Slaoui, A. (author) / Grob, J. J. (author) / Kanoun, M. (author) / Burignat, S. (author) / Souifi, A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 488-493

Publication date:

2005-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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