A platform for research: civil engineering, architecture and urbanism
Effect of Technical Condition in RTCVD on Deposeed Poly-Si Thin-Film
Effect of Technical Condition in RTCVD on Deposeed Poly-Si Thin-Film
Effect of Technical Condition in RTCVD on Deposeed Poly-Si Thin-Film
Zhijian, W. (author) / Haifeng, L. (author) / Yong, H. (author)
RARE METAL MATERIALS AND ENGINEERING ; 34 ; 1149-1151
2005-01-01
3 pages
Article (Journal)
Unknown
DDC:
669
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Selective SiGe epitaxy by rtcvd for new device architectures
British Library Online Contents | 2002
|Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD
British Library Online Contents | 2002
|Microstructure evolution of nanometer-sized hemispherical-grained Si deposited by RTCVD
British Library Online Contents | 2001
|Thermal stability of W on RTCVD Si~1~-~xGe~x films
British Library Online Contents | 1993
|Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
British Library Online Contents | 2003
|