Selective SiGe epitaxy by rtcvd for new device architectures

Ribot, P. / Monfray, S. / Skotnicki, T. et al. | British Library Online Contents | 2002

Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD

Ribot, P. / Dutartre, D. | British Library Online Contents | 2002

Microstructure evolution of nanometer-sized hemispherical-grained Si deposited by RTCVD

Berger, S. | British Library Online Contents | 2001

Thermal stability of W on RTCVD Si~1~-~xGe~x films

Aubry, V. / Meyer, F. / Laval, R. et al. | British Library Online Contents | 1993

Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

Morales, F. M. / Molina, S. I. / Araujo, D. et al. | British Library Online Contents | 2003