Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study: Fid-Bau Portal

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

Slugen, V. / Harmatha, L. / Tapajna, M. / Ballo, P. / Pisecny, P. / Sik, J. / Kogel, G. / Krsjak, V.

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Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

Slugen, V. / Harmatha, L. / Tapajna, M. / Ballo, P. / Pisecny, P. / Sik, J. / Kogel, G. / Krsjak, V.

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

Slugen, V. / Harmatha, L. / Tapajna, M. / Ballo, P. / Pisecny, P. / Sik, J. / Kogel, G. / Krsjak, V.

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Title:

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

Contributors:

Slugen, V. (author) / Harmatha, L. (author) / Tapajna, M. (author) / Ballo, P. (author) / Pisecny, P. (author) / Sik, J. (author) / Kogel, G. (author) / Krsjak, V. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 3201-3208

Publication date:

2006-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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