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    N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution

    New search for: Oliveira, A. R.
    New search for: Carreno, M. N.

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    N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution

    New search for: Oliveira, A. R.
    New search for: Carreno, M. N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution

    New search for: Oliveira, A. R.
    New search for: Carreno, M. N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution

    Contributors:

    Oliveira, A. R. (author) / Carreno, M. N. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 128 ; 44-49

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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