Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution
N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution
N and p-type doping of PECVD a-SiC:H obtained under "silane starving plasma" condition with and without hydrogen dilution
Oliveira, A. R. (Autor:in) / Carreno, M. N. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 128 ; 44-49
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Mechanical stress in PECVD a-SiC:H: aging and plasma treatments effects
British Library Online Contents | 2004
|Annealing Effect on the Optical Properties of a-SiC:H Films Deposited by PECVD
British Library Online Contents | 2002
|British Library Online Contents | 1996
|Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution
British Library Online Contents | 2005
|Taylor & Francis Verlag | 1977
|