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SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
Juhel, M. (author) / Laugier, F. (author) / Delille, D. (author) / Wyon, C. (author) / Kwakman, L. F. (author) / Hopstaken, M. (author)
APPLIED SURFACE SCIENCE ; 252 ; 7211-7213
2006-01-01
3 pages
Article (Journal)
English
DDC:
621.35
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