SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV: Fid-Bau Portal

SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

Juhel, M. / Laugier, F. / Delille, D. / Wyon, C. / Kwakman, L. F. / Hopstaken, M.

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SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

Juhel, M. / Laugier, F. / Delille, D. / Wyon, C. / Kwakman, L. F. / Hopstaken, M.

SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

Juhel, M. / Laugier, F. / Delille, D. / Wyon, C. / Kwakman, L. F. / Hopstaken, M.

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Document information

Title:

SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV

Contributors:

Juhel, M. (author) / Laugier, F. (author) / Delille, D. (author) / Wyon, C. (author) / Kwakman, L. F. (author) / Hopstaken, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 7211-7213

Publication date:

2006-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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